?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40T100SMD rev. c3 FGH40T100SMD 1000 v, 40 a field stop trench igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width lim ited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1000 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 125 o c40 a i cm (1) pulsed collector current @ t c = 25 o c 120 a i f diode forward current @ t c = 25 o c80 a diode forward current @ t c = 125 o c40 a i fm (1) pulsed diode forward current @ t c = 25 o c 120 a p d maximum power dissipation @ t c = 25 o c 333 w maximum power dissipation @ t c = 125 o c111 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.45 o c / w r ? jc (diode) thermal resistance, junction to case - 0.8 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w g e c e c g collector (flange) FGH40T100SMD 1000 v, 40 a field stop trench igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.9 v(typ.) @ i c = 40 a ? high input impedance ? fast switching ? rohs compliant applications ? ups, welder, pfc general description using innovative field stop tr ench igbt technology, fairchild ? ?s new series of field stop trench igbts offer the optimum perfor- mance for hard switching application such as ups, welder and pfc applications.
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40T100SMD rev. c3 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package eco status packaging type qty per tube FGH40T100SMD FGH40T100SMD to-247 rohs tube 30ea symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 1000 - - v ? bv ces ????? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ua -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 1000 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 4.2 5.3 6.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.92.3v i c = 40a , v ge = 15v, t c = 125 o c -2.3- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3980 5295 pf c oes output capacitance - 124 165 pf c res reverse transfer capacitance - 76 115 pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -2938ns t r rise time - 42 55 ns t d(off) turn-off delay time - 285 371 ns t f fall time - 23 30 ns e on turn-on switching loss - 2.35 3.1 mj e off turn-off switching loss - 1.15 1.5 mj e ts total switching loss - 3.5 4.6 mj t d(on) turn-on delay time v cc = 600v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 175 o c -2736ns t r rise time - 49 64 ns t d(off) turn-off delay time - 285 371 ns t f fall time - 20 26 ns e on turn-on switching loss - 4.4 5.7 mj e off turn-off switching loss - 1.9 2.5 mj e ts total switching loss - 6.3 8.2 mj q g total gate charge v ce = 600v, i c = 40a, v ge = 15v - 265 398 nc q ge gate to emitter charge - 32 48 nc q gc gate to collector charge - 135 203 nc
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40T100SMD rev. c3 electrical characteris tics of diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 40a t c = 25 o c- 3.4 4.4 v t c = 175 o c- 2.6 - t rr diode reverse recovery time i f =40a, di f /dt = 200a/ ? s t c = 25 o c - 60 78 ns t c = 175 o c - 256 - q rr diode reverse recovery charge t c = 25 o c - 185 260 nc t c = 175 o c - 1512 -
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40T100SMD rev. c3 typical performance characteristics figure 1. typical output characteristics figure 2. typical output ch aracteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0246810 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 30 60 90 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 3691215 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1 2 3 4 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40T100SMD rev. c3 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10 . gate charge characteristics figure 11. soa characteristics figur e 12. turn-on characteristics vs. gate resi stance 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 200 250 300 0 3 6 9 12 15 v cc = 600v 200v common emitter t c = 25 o c 400v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 300 2000 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 10 100 200 switching time [ns] common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r gate resistance, r g [ ? ]
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40T100SMD rev. c3 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 20 30 40 50 60 70 80 10 100 1000 common emitter v ge = 15v, r g =10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 1020304050 1 10 100 1000 2000 switching time [ns] common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f gate resistance, r g [ ? ] ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 0.1 1 10 common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 20 30 40 50 60 70 80 0.1 1 10 15 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a]
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40T100SMD rev. c3 typical performance characteristics figure 19. current derating figure 20. loa d current vs. frequence figure 21. diode forward characteristics figure 22. reverse current figure 23. stored charge figure 24. reverse recovery time 1k 10k 100k 1m 0 50 100 duty cycle : 50% t c = 125 o c powe dissipation = 111 w v cc = 600v load current : peak of square wave collector current, i c a ] switching frequency, f [hz] 25 50 75 100 125 150 175 0.1 1 10 100 common emitter v ge = 15v collector current, ic[a] collector-emitter case temperature, t c [ o c] 0 200 400 600 800 1000 1e-3 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 175 o c t c = 75 o c reverse currnet, i r [ua] v r [v] 012345 1 10 80 tc = 17 5 o c tc = 7 5 o c tc = 2 5 o c tc = 7 5 o c --- tc = 17 5 o c tc = 2 5 o c forward current, i f [a] forward voltage, v f [v] 0 10203040 0 100 200 300 400 500 100a/us di/dt = 200a/us 100a/us tc = 2 5 o c tc = 17 5 o c --- di/dt = 200a/us reverse recovery time, trr [ns] forward current, i f [a] 0 10203040 2.0 1.6 1.2 0.8 0.4 0.0 forward current, i f [a] tc = 2 5 o c tc = 17 5 o c --- 100a/us di/dt = 200a/us 100a/us di/dt = 200a/us stored recovery charge, qrr [uc]
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40T100SMD rev. c3 typical performance characteristics figure 25. transient thermal impedance of igbt figure 26.transient thermal impedance of diod e 0.00001 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 0.00001 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40T100SMD rev. c3 mechanical dimensions to-247a03
FGH40T100SMD 1000 v, 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FGH40T100SMD rev. c3 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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